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- Title
A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction.
- Authors
Zhang, Teng-Fei; Wu, Guo-An; Wang, Jiu-Zhen; Yu, Yong-Qiang; Zhang, Deng-Yue; Wang, Dan-Dan; Jiang, Jing-Bo; Wang, Jia-Mu; Luo, Lin-Bao
- Abstract
In this study, we present a simple ultraviolet (UV) light photodiode by transferring a layer of graphene film on single-crystal ZnO substrate. The as-fabricated heterojunction exhibited typical rectifying behavior, with a Schottky barrier height of 0.623 eV. Further optoelectronic characterization revealed that the graphene-ZnO Schottky junction photodiode displayed obvious sensitivity to 365-nm light illumination with good reproducibility. The responsivity and photoconductive gain were estimated to be 3×104 A/W and 105, respectively, which were much higher than other ZnO nanostructure-based devices. In addition, it was found that the on/off ratio of the present device can be considerably improved from 2.09 to 12.1, when the device was passivated by a layer of AlOx film. These results suggest that the present simply structured graphene-ZnO UV photodiode may find potential application in future optoelectronic devices.
- Subjects
ULTRAVIOLET radiation; SCHOTTKY barrier
- Publication
Nanophotonics (21928606), 2017, Vol 6, Issue 5, p1073
- ISSN
2192-8606
- Publication type
Article
- DOI
10.1515/nanoph-2016-0143