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- Title
Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate.
- Authors
Wu, Peng; Liu, Jianping; Jiang, Lingrong; Hu, Lei; Ren, Xiaoyu; Tian, Aiqin; Zhou, Wei; Ikeda, Masao; Yang, Hui
- Abstract
Growth behaviors of GaN on patterned GaN substrate were studied herein. Spiral and nucleation growth were observed after miscut-induced atomic steps disappeared. The morphology of nucleation growth at different temperature is explained by a multi-nucleation regime introducing critical supersaturation. Simulated results based on a step motion model successfully explain the growth behaviors on stripes. These findings can be applied to control the surface kinetics of devices such as laser diodes grown on patterned substrate.
- Subjects
GALLIUM nitride; DISCONTINUOUS precipitation; SEMICONDUCTOR lasers; STRIPES; SUPERSATURATION; GALLIUM nitride films
- Publication
Nanomaterials (2079-4991), 2022, Vol 12, Issue 3, p478
- ISSN
2079-4991
- Publication type
Article
- DOI
10.3390/nano12030478