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- Title
Transport parameters and optical properties of selectively doped Ga(Al)As/Zn(Mn)Se heterovalent structures with a two-dimensional hole channel.
- Authors
Evropeytsev, E.; Klimko, G.; Komissarova, T.; Sedova, I.; Sorokin, S.; Gronin, S.; Kazantsev, D.; Ber, B.; Ivanov, S.; Toropov, A.
- Abstract
The growth of III-V/II-VI:Mn heterostructures with a high hole concentration in the AlGaAs:Be/GaAs/AlGaAs 2D channel situated in the immediate vicinity of the AlGaAs/Zn(Mn)Se heterovalent interface by molecular-beam epitaxy is reported. Despite the decrease in the hole concentration in the GaAs channel upon a decrease in the distance between the channel and the heterovalent interface, the hole concentration reaches a value of 1.5 × 10 cm at a temperature of 300 K even at the minimum distance of 1.2 nm. Deep profiling by dynamic secondary-ion mass spectrometry confirmed the back diffusion of Mn from ZnMnSe into the III-V part. High hole concentration and the presence of magnetic manganese ions in the GaAs conduction channel determine the interest in the structures as possible objects in which the effect of magnetic ordering in heterogeneous semiconductor systems can be studied.
- Subjects
GALLIUM aluminum arsenide; DOPING agents (Chemistry); HETEROSTRUCTURES; PARAMETER estimation; TWO-dimensional models; MANGANESE; MOLECULAR beam epitaxy; ION channels
- Publication
Semiconductors, 2014, Vol 48, Issue 1, p30
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782614010126