We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Scanning probe spectroscopy: Probing dopants at the atomic level.
- Authors
Simmons, Michelle Y.
- Abstract
The article focuses on the study which examines the significance of capacitance-based scanning probe spectroscopy to the dopant atoms in a semiconductor. The study showed that the technique probes successive charging states of the donor molecules determined the correct quantum description of the coupling of isolated donors and the platform of testing the atoms and molecules in a solid state. Dopants are the impurities deliberately added in low concentrations of semiconductor devices.
- Subjects
SCANNING probe microscopy; ATOMS; MOLECULES; SEMICONDUCTORS; SOLID state chemistry; PHYSICAL &; theoretical chemistry
- Publication
Nature Physics, 2008, Vol 4, Issue 3, p165
- ISSN
1745-2473
- Publication type
Article
- DOI
10.1038/nphys902