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- Title
Transmutation of the Crystalline Structure of β-SiC Nanowires to an Amorphous Structure Through Cu Ion Shelling.
- Authors
Rashid Khan, M.; Aisida, Samson O.; Hussain, Javed; Ahmad, Ishaq; Honey, Shehla; Jan, Tariq; Rauf Khan, M.; Mahmoud, Arshad; Zhao, Ting-kai
- Abstract
The amorphous structural study of silicon carbide nanowires (SiC-NWs) has drawn strenuous attention in recent years due to their worthwhile properties for wide applications, chiefly in optoelectronics. The facile transformation of crystalline SiC-NWs to amorphous defective SiC-NWs is a challenging task for their broad-scale applications. Herein, we report a fantastic strategy (by applying a 5UDH Pelletron accelerator, located at the National Centre for Physics, Islamabad, Pakistan) for Cu ion implantation (fixed at 10 MeV) on the crystalline SiC-NWs to incorporate them into an amorphous structure. For the defects study, various dose rates of Cu+ ion ranging from 5 × 1015 ions/cm2 to 5 × 1016 ions/cm2 were bombarded on SiC-NWs, and a complete transmutation to the amorphous structure of SiC-NWs under a shelling dose of 8 × 1016 ions/cm2 was observed. This work will provide a better avenue for the structural deformation blueprints of the next-generation nanomaterials. Amorphous structural transformation is explained by collision cascade effects phenomena.
- Subjects
ISLAMABAD (Pakistan); CRYSTAL structure; NANOWIRES; SILICON nanowires; ION implantation; SILICON carbide
- Publication
Journal of Electronic Materials, 2020, Vol 49, Issue 11, p6671
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-020-08448-5