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- Title
Temperature-Dependent Characteristics of 1.3 μm InAs/InGaAs/GaAs Quantum Dot Ring Lasers.
- Authors
Gordeev, N. Yu.; Moiseev, E. I.; Fominykh, N. A.; Kryzhanovskaya, N. V.; Beckman, A. A.; Kornyshov, G. O.; Zubov, F. I.; Shernyakov, Yu. M.; Zhukov, A. E.; Maximov, M. V.
- Abstract
The temperature characteristics of ring lasers with a diameter of 480 μm of an original design with an active region based on 10 layers of InAs/InGaAs/GaAs quantum dots are studied. The lasers demonstrated a low threshold current density (200 A/cm2 at 20°C), the characteristic temperature of the threshold current in the range of 20–100°C was 68 K, the maximum lasing temperature was as high as 130°C. These values are only slightly inferior to the parameters of the edge-emitting lasers fabricated from the same epitaxial wafer.
- Subjects
RING lasers; QUANTUM rings; QUANTUM dots; INDIUM gallium arsenide; AUDITING standards; RESONANT tunneling
- Publication
Technical Physics Letters, 2023, Vol 49, pS196
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785023900728