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- Title
Rational Control of GeSn Nanowires.
- Authors
Gong, Ruiling; Zheng, Lulu; Roca i Cabarrocas, Pere; Chen, Wanghua
- Abstract
Research on Si compatible direct bandgap semiconductors is a hot topic due to the high demand of Si compatible optoelectronics. The group IV compounds, namely GeSn, has been studied extensively in its different forms: thin films, nanowires (NWs), and nanocrystals. Importantly, the attention being paid to GeSn NWs has increased in recent years thanks to two key factors: 1) better crystalline quality due to an easier strain relaxation in NWs; and 2) extraordinary Sn content (up to 30 at.%) associated to a very fast NW growth (>20 nm s−1). Therefore, to effectively control the growth of GeSn NWs is a key issue for a practical application. Herein, various control aspects including the nature of the catalysts, the morphology of the NWs, and their Sn content are presented.
- Subjects
NANOWIRES; THIN films; OPTOELECTRONICS; SUPPLY &; demand; TIN; SEMICONDUCTORS
- Publication
Physica Status Solidi - Rapid Research Letters, 2022, Vol 16, Issue 5, p1
- ISSN
1862-6254
- Publication type
Article
- DOI
10.1002/pssr.202100554