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- Title
Prolonged Annealing Improves Hole Transport of Silicon Heterojunction Solar Cells.
- Authors
Huang, Shenglei; Liu, Wenzhu; Li, Xiaodong; Li, Zhenfei; Wu, Zhuopeng; Huang, Wei; Yang, Yuhao; Jiang, Kai; Shi, Jianhua; Zhang, Liping; Meng, Fanying; Liu, Zhengxin
- Abstract
The Schottky barrier is a fundamental issue when an n‐type transparent conductive oxide (TCO) is contacted with p‐type hydrogenated amorphous silicon (p‐a‐Si:H) in silicon heterojunction (SHJ) solar cells. Herein, it is found that the hydrogen (H) atoms in p‐a‐Si:H diffuse into tungsten‐doped indium oxide (IWO) during annealing, which improves the electric properties of both the IWO films and the p‐a‐Si:H/IWO interface. H diffusion reduces the surface work function of p‐a‐Si:H, and thus reduces the Schottky barrier between the p‐a‐Si:H and the IWO. Consequently, it improves the hole transport of SHJ solar cells; i.e., both the fill factor (FF) and power conversion efficiency (PCE) substantially increase. These findings provide a new strategy to optimize the FF of SHJ solar cells.
- Subjects
SILICON solar cells; HYDROGENATED amorphous silicon; SOLAR cells; SCHOTTKY barrier; SILICON films; ELECTRON work function; OXIDE coating; PHOTOVOLTAIC power systems
- Publication
Physica Status Solidi - Rapid Research Letters, 2021, Vol 15, Issue 12, p1
- ISSN
1862-6254
- Publication type
Article
- DOI
10.1002/pssr.202100015