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- Title
Latent spatial instability of current in high-power bipolar switches.
- Authors
Gorbatyuk, A. V.
- Abstract
A theory describing the injection instability in high-power bipolar semiconductor switches at a current density of J ∼ 1 kA/cm2 and a collector field strength of E > 5 × 104 V/cm is proposed. It is established that, if the efficiency of cathode injection source increases with J and E, fluctuations in the current distribution over wafer area with a wavelength on the order of λ ∼ 100 μm (not related to the wafer transverse size) can develop in such devices. The corresponding volume fluctuations in the charge carrier densities, potentials, field strength, and current density are localized in the bulk, at a depth that is much smaller than the plate thickness. This latent instability is not related to the sign of the external differential resistance, so that internal damping factors are necessary in order to prevent its development.
- Subjects
SEMICONDUCTORS; SEMICONDUCTOR switches; WAVEGUIDES; WAVELENGTHS; ELECTRIC waves; ELECTROMAGNETIC waves
- Publication
Technical Physics Letters, 2006, Vol 32, Issue 12, p999
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785006120017