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- Title
Special features of the electrical characteristics of CdTe-based Schottky diodes with almost intrinsic conduction.
- Authors
Kosyachenko, L. A.; Sklyarchuk, V. M.; Maslyanchuk, O. L.; Grushko, E. V.; Gnatyuk, V. A.; Aoki, T.; Hatanaka, Y.
- Abstract
The electrical properties of Schottky diodes obtained by vacuum deposition of Al on CdTe with weakly pronounced p-type conductivity (room-temperature ρ > 109 Ω cm) have been studied. The diodes exhibit nonrectifying, almost linear current-voltage ( I-V) characteristics at bias voltages | V| < 3–5 V, whereas the photo emf amounts to 0.28–0.30 V, which is explained by specific features of the charge transfer mechanism related to a large resistance of the volume part of the diode structure. A decrease in this resistance as a result of irradiation (at photon energies corresponding to an appropriate absorption level) makes the I-V curve shape typical of semiconductor diodes. The results of calculations performed within the framework of the Sah-Noyce-Shockley theory agree with the experimental data.
- Subjects
DIODES; CADMIUM; TELLURIUM compounds; TELLURIDES; SEMICONDUCTORS; ELECTRONS
- Publication
Technical Physics Letters, 2006, Vol 32, Issue 12, p1056
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785006120182