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- Title
Determination of Silicon Carbide Structures Layer Thicknesses using Reflection Spectra Frequency Analysis.
- Authors
Panov, M. F.; Pavlova, M. V.
- Abstract
The paper introduces a method of determining thicknesses of single- and multi-layer silicon carbide structures using infrared reflection spectrum frequency analysis. Spectrum waveform is affected by spectral interference in layers or groups of layers. LabView software package offered a solution to perform spectral analysis. The results are provided both for model structures and experimental spectra. Model structure' reflection spectrum was evaluated using a dielectric function that took into account the response of lattice vibrations and free charge carriers. Experimental spectra were obtained from a real multilayer structure manufactured for power electronics devices.
- Subjects
FREQUENCY spectra; SPECTRUM analysis; SILICON carbide; DIELECTRIC function; INFRARED spectra; FREE vibration; POWER electronics
- Publication
Technical Physics, 2021, Vol 66, Issue 6, p779
- ISSN
1063-7842
- Publication type
Article
- DOI
10.1134/S1063784221050182