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- Title
Utilizing NDR effect to reduce switching threshold variations in memristive devices.
- Authors
Alibart, Fabien; Strukov, Dmitri
- Abstract
Variations in the switching threshold voltage of memristive devices present significant challenges for their integration into large-scale circuits. In this paper, we propose to address this problem by adding a device exhibiting S-type (N-type) negative differential resistance (NDR) in series (parallel) with memristive devices. The main effect comes from the transition between low- and high-conductivity branches of the NDR device, which leads to a redistribution of the voltage drop inside the device stack, and, as a result, the effective lowering of variations in the switching threshold. The idea is checked experimentally using a TiO memristive device connected in parallel with a tunnel GaAs diode.
- Subjects
SWITCHING theory; THRESHOLD voltage; LARGE scale integration of circuits; TITANIUM oxides; GALLIUM arsenide; DIODES; MATERIALS science
- Publication
Applied Physics A: Materials Science & Processing, 2013, Vol 111, Issue 1, p199
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-013-7550-5